Wide Bandgap Engineering in Power Transistors Using GaN Windows

摘要

In this paper a new LDMOS structure using wide bandgap material is proposed. The proposed GaN-LDMOS structure is formed by the GaN windows in the drift region. Four similar windows which are surrounded by Si3N4 show higher breakdown voltage and reduced specific on-resistance. The simulation with ATLAS simulator shows that the optimized length and number of the windows are important to have an acceptable power characteristic. Moreover, higher current flow due to the extended depletion region in the drift region and high doping density of the Si3N4 region is achieved in the proposed GaN-LDMOS in comparison to the conventional LDMOS transistor (C-LDMOS).