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Vacuum Ultraviolet (120–200 nm) Avalanche Photodetectors

机译:真空紫外 (120–200 nm) 雪崩光电探测器

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摘要

The authors wish to correct errors related to Figure 1d of the manuscript, which will mislead the reader. Due to the authors’ carelessness, the experimental data were numbered incorrectly, which led to misuse of photoluminescence (PL) data for AlN film on transparent semi-insulating SiC substrate. Here, we provide the accurate testing information, i.e., the PL data of AlN film on green n-type SiC substrate. The following correction should be applied to the published paper: Figure 1 needs to be replaced by the image below, which contains the updated part (d).
机译:作者希望纠正与手稿图1d相关的错误,这些错误会误导读者。由于作者的粗心大意,实验数据编号错误,导致透明半绝缘SiC衬底上AlN薄膜的光致发光(PL)数据被误用。在这里,我们提供了准确的测试信息,即绿色n型SiC衬底上AlN薄膜的PL数据。应对已发表的论文进行以下更正:图1需要替换为下图,其中包含更新的部分(d)。

著录项

  • 来源
    《Advanced Optical Materials》 |2022年第23期|2202138.1-2202138.1|共1页
  • 作者

    Lemin Jia; Feng Huang; Wei Zheng;

  • 作者单位

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China;

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  • 正文语种 英语
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