In this paper at first we review a procedure that, through the design of a basic current mirror, allows a comparison between CNTFET and MOS technology. For every simulation parameters of merit, such as relative error in reference current replication and small-signal output resistance, are evaluated in order to show the differences between the two considered technologies. Then the analysis is carried out considering also the effects of noise. For reference current of 1 mu A and 10 mu A the output static and dynamic characteristics are better in the case of CNTFET, but for all cases the output noise current is always higher for the CNTFET than for the MOS. The software used is Advanced Design System (ADS) which is compatible with the Verilog A programming language.
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机译：在本文中，我们首先回顾了一种程序，通过设计基本电流镜，可以比较CNTFET和MOS技术。对于每个仿真参数，例如参考电流复制的相对误差和小信号输出电阻，都会进行评估，以显示两种所考虑的技术之间的差异。然后进行分析，同时考虑噪声的影响。对于1 mu A和10 mu A的基准电流，CNTFET的输出静态和动态特性更好，但对于所有情况，CNTFET的输出噪声电流总是高于MOS。使用的软件是高级设计系统（ADS），它与Verilog A编程语言兼容。
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