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机译:基于铁电内部电压放大的全栅极纳米线垂直隧穿 FET
Natl Yang Ming Chiao Tung Univ;
gate-all-around; Hf0 5Zr0 5O2; internal voltage; nanowire; optimized metal-ferroelectric-semiconductor; Si0 6Ge0 4; vertical tunneling; NEGATIVE-CAPACITANCE; DRAIN CURRENT; SILICON; FIELD; PERFORMANCE; TRANSISTORS; FILMS; MODEL;