Abstract This paper introduces a super steep pocket doped ferroelectric tunnel junction which explores the concept of vertical tunneling as well as tunneling across ferroelectric junction. The device structure is systematically designed by optimizing the pocket and ferroelectric thickness to maximize the ION/IOFF ratio. The incorporation of n+ pocket enhances the ON current. A high ON current of the order of 10?5?A/μm with average subthreshold swing (SS) of 11?mV/decade is obtained. Moreover, the proposed device has been presented as dielectric modulation-based label-free biosensor. Sensitivities are reported for charged and neutral biomolecule considering various values of dielectric constant. Further, the energy efficiency for logic activity and switching time of the device have been analyzed. By benchmarking its performance with the existing TFET structures, the proposed FTJ device proves to be a better candidate for ultra low power applications.
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