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机译:Synergy effect of microwave annealing and high-pressure hydrogen annealing on Poly-Si thin-film transistor
Pohang Univ Sci & Technol POSTECH;
Samsung Elect;
poly-Si thin film transistor; microwave annealing; high-pressure hydrogen annealing; grain boundary barrier height; mobility; THRESHOLD VOLTAGE; CRYSTALLIZATION; PERFORMANCE; DEFECTS; MODEL; RAMAN; TFT;