Abstract To improve the electrical performance of power devices, materials used in fabrication need to be analyzed and optimized. By numerical simulations, we reveal that the breakdown voltage (BV) and location of a lateral diffused MOS power device simultaneously depend also on trench oxide permittivity. For a given device geometry, while the trench oxide permittivity with a certain value leads to a maximal BV, a smaller (larger) value causes electrical breakdown in the Si drift channel around the bottom (top) of the trench. This trend remains the same when Si is replaced by SiC. Our study implies that any by-product reducing the trench permittivity during trench filling should be avoided.
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机译：摘要 为了提高功率器件的电性能，需要对功率器件的制造材料进行分析和优化。通过数值模拟，我们发现横向扩散MOS功率器件的击穿电压（BV）和位置同时取决于沟槽氧化物介电常数。对于给定的器件几何形状，虽然具有特定值的沟槽氧化介电常数会导致最大 BV，但较小（较大）的值会导致沟槽底部（顶部）周围的 Si 漂移通道中发生电击穿。当Si被SiC取代时，这种趋势保持不变。我们的研究表明，应避免在沟槽填充过程中降低沟槽介电常数的任何副产品。
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