Phosphorus vacancy mediated complex diffusion mechanism of Zn in InP

摘要

? 2023 Elsevier B.V.Implantation and diffusion of Zn dopant into bulk InP:S were performed. Zn concentration profiles were investigated by secondary ion mass spectrometry and capacitance–voltage method. The influence of thermodynamic conditions of annealing on the diffusion mechanism of Zn atoms was observed and described. Excess phosphorus vacancies VP generation causes diffusion of Zn dopant by the zinc atom – phosphorus vacancy complex VP – ZnIn – VP producing a characteristic diffusion profile. Such electrically inactive zinc atom lattice site, cause a lower diffusion coefficient than that at a generally known interstitial-substitutional mechanism.