24.96-Efficiency FACsPbI3 Perovskite Solar Cells Enabled by an Asymmetric 1,3-Thiazole-2,4-Diammonium

摘要

Surmounting complicated defects at the electron transport layer (ETL) andperovskite interface plays a non-trivial role in improving efficiency and stabilityof perovskite solar cells (PSCs). Herein, an asymmetric interface modificationstrategy (AIMS) is developed to passivate the defects from both a SnO_2 ETL andthe perovskite buried surface via incorporating 1,3-thiazole-2,4-diammonium(TDA) into the SnO_2/perovskite interface. Detailed experimental and calculatedresults demonstrate that N_3 (the nitrogen atom bonding to the imine) in theTDA preferentially cures the free hydroxyl (-OH), oxygen vacancy (VO), and theSn-related defects on the SnO_2 surface, while N1 (the nitrogen atom bondingto the vinyl) is more inclined to passivate the Pb~（2+） and I? related defects at theperovskite buried surface. As a result, the TDA-modified FACsPbI_3 PSC yields achampion power conversion efficiency (PCE) of 24.96 with a gratifying opencircuitvoltage (Voc) of 1.20 V. In addition, the optimized PSCs exhibit charmingair-operational stability with the unencapsulated device sustaining 97.04 ofits initial PCE after storage in air conditions for 1400 h. The encapsulated devicemaintains 90.21 of its initial PCE after maximum power point tracking for 500 h.