(013004)Effect of Particle Size and pH Value of Slurry on Chemical Mechanical Polishing of SiO_2 Film

摘要

This study investigated the effects of particle size and pH of SiO_2-based slurry on chemical mechanical polishing for SiO_2 film. It was found that the removal rates and surface roughness of the material was highly dependent on the particle size and pH. As the particle size varied, the main polishing mechanism reasoned to provide activation energy to mechanical erasure. In addition, pH affected the particle size and Zeta potential, which had an important effect on the strength of the mechanical and chemical action of the chemical mechanical polishing. The change in mechanical action greatly influenced the removal rate. According to the experimental results, the best polishing of SiO_2 film was achieved with 40 nm particle size SiO_2 abrasives when the pH was 4.