Diffusion Coefficient at Double Resonances in Frequency and Temperature, Applied to (n~+/p/p~+) Silicon Solar Cell Base Thickness Optimization under Long Wavelength Illumination

摘要

The diffusion coefficient of the minority charge carriers in the base of a silicon solar cell under temperature and subjected to a magnetic field, passes in resonance at temperature (T_(opt)). For this same magnetic field, the diffusion coefficient of the photogenerated carriers by a monochromatic light in frequency modulation enters into resonance, at the frequency (ω_c). Under this double resonance in temperature and frequency, the diffusion coefficient is used in the expression of the recombination velocity of the minority charge carriers on the back side of the base of the solar cell (n~+/p/p~+), to obtain, by a graphical method, the optimum thickness. A modeling of the results obtained shows a material saving (Si), in the development of the solar cell.