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RF GaN on Silicon: The Best of Two Worlds

机译:RF GaN on Silicon:两全其美

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This article discussed the development of an RF GaN on Si technology for wireless infrastructure that improves the cost-performance value of GaN. After many years of GaN on Si development, the technology has matured to deliver its potential, providing efficiency on par with GaN on SIC at a lower cost based on Si wafer processing. This article has shown GaN on Si can meet the efficiency, linearization and power density requirements of 5G wireless communication systems. We believe this is the start of a longer journey, where further industry developments will push the capabilities of GaN on Si to higher frequencies and higher power levels, potentially expanding applications beyond wireless infrastructure.
机译:本文讨论了用于无线基础设施的射频硅基氮化镓技术的开发,该技术可提高氮化镓的性价比。经过多年的硅基氮化镓开发,该技术已经成熟,可以发挥其潜力,在硅晶圆加工的基础上,以更低的成本提供与硅基氮化镓相当的效率。本文展示了硅基氮化镓可以满足5G无线通信系统的效率、线性化和功率密度要求。我们相信,这是一个漫长旅程的开始,进一步的行业发展将推动硅基氮化镓的能力达到更高的频率和更高的功率水平,有可能将应用扩展到无线基础设施之外。

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