Efficiency of Injecting Radiation Defects during Irradiation of Silicon n~+-p Structures with Fast Electrons

摘要

The results of an experimental study of the formation of recombination radiation-defect sites in n+–p silicon structures during irradiation with high-energy electrons have been presented. It has been shown that zinc doping into p-Si to a number density comparable to boron does not change the lifetime of minority charge carriers (τ). It has been found that an increase in the zinc number density to 6 × 1014 cm–3 in doped n+–p structures leads to a decrease in the radiation damage coefficients of τ by a factor more than 3. A mechanism explaining the effect of Zn impurities on the process of radiation defect formation in silicon structures has been proposed.