Voltage Control of Patterned Metal/Insulator Properties in Oxide/Oxyfluoride Lateral Perovskite Heterostructures via Ion Gel Gating

摘要

Dynamic control of patterned properties in perovskite oxide films can enablenew architectures for electronic, magnetic, and optical devices. In this study,it is shown that SrFeO_(3-δ)/SrFeO_2F laterally-heterostructured films enablevoltage-controlled tunable and reversible metal-insulator patterned propertiesusing room-temperature ion gel gating. Specifically, SrFeO_(3-δ) film regions canbe toggled between insulating HxSrFeO_(2.5) and metallic SrFeO_3 by electrochemicalredox, while SrFeO_2F regions remain robustly insulating and areunaffected by ion gel gating. Various gating architectures are also comparedand establish the advantages of employing a conductive substrate as thecontacting electrode, as opposed to at the film surface, thereby achievingcomplete and reversible reduction and oxidation among SrFeO_(3-δ), H_xSrFeO_(2.5),and SrFeO_3. This approach to voltage-modulated patterned electronic, optical,and magnetic properties should be broadly applicable to oxide materials amenableto fluoridation, and potentially other forms of anion substitution.