The prospect of implementing quantum device architectures with technologically mature III-V semiconductors requires precisely controlled topologically protected edge states and bulk insulation. However, experimentally reaching this regime with III-V heterostructure epitaxy has been difficult due to charged bulk defects. Charged defects prevent bulk insulation and disturb the stability of edge states. Hence, we study carrier properties in a hybridized III-V InAs0.9Sb0.1/GaSb superlattice (SL) structure. We realize that an electron density (mobility) is limited to approximately 10(12) cm(-2) (10(4) cm(2)/V s). In order to understand these limits, the authors investigate the in-plane mobility of hybridized SLs as a function of current-carrying layer thickness, L, to determine scattering mechanisms that restrict carrier mobility. Although theory predicts the in-plane mobility is proportional to L-6 dominated by interface roughness scattering (IRS) at low temperatures, we report that mobility follows the fourth power dependence, which is a weaker than expected from IRS theory. We attribute the discrepancy between experiment and the model to interface intermixing and wave function penetration into barrier regions. We use this understanding to develop a strategy for realizing high-performance topological materials.
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