首页> 外文期刊>ECS Journal of Solid State Science and Technology >(076008)Breaking Boundaries in LED Technology: Exploring the Revolutionary Diode Characteristics of Screen Printed (TiO_2)1-x (CuO)x Thick Films
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(076008)Breaking Boundaries in LED Technology: Exploring the Revolutionary Diode Characteristics of Screen Printed (TiO_2)1-x (CuO)x Thick Films

机译:(076008)打破LED技术的界限:探索丝网印刷(TiO_2)1-x(CuO)x厚膜的革命性二极管特性

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摘要

A thick TiO_2-CuO composite ?lm is deposited on a Si substrate by a low-cost screen printing method. Both anatase and CuOdoped TiO_2 are characterized for diode applications. X-ray Diffraction (XRD) con?rms that the composite ?lm exists as an anatase phase of TiO_2 and a monoclinic phase of CuO with a maximum diffraction of (101) plane. SEM images depict the less severe agglomeration of particles for the doped TiO_2 as compared to the anatase TiO_2. The UV-visible spectra reveal a direct band gap shift of 3.35 eV (pure TiO_2) to 3.26 eV (doped TiO_2). From the PL study, the blue shaded emission is perfectly derived for anatase TiO_2 while the color is seen to change to the white zone supporting TiO_2-CuO composite formation as depicted by the CIE diagram. The diode parameters such as ideality factor (n) and barrier height (Φb) are calculated with the help of I-V characteristics. This only reported novel effort on screen-printed TiO_2-CuO thick ?lm may help in manufacturing possible LEDs for optoelectronic applications.
机译:通过低成本的丝网印刷方法将厚厚的TiO_2-CuO复合材料?lm沉积在Si衬底上。锐钛矿和 CuOdoped TiO_2都适用于二极管应用。X射线衍射(XRD)表明,复合材料以TiO_2锐钛矿相和CuO的单斜相形式存在,最大衍射率为(101)平面。SEM图像显示,与锐钛矿TiO_2相比,掺杂TiO_2颗粒团聚的严重程度较低。紫外-可见光谱显示,直接带隙偏移为3.35 eV(纯TiO_2)至3.26 eV(掺杂TiO_2)。从PL研究中,锐钛矿TiO_2的蓝色阴影发射是完美的,而颜色则变为支持TiO_2-CuO复合材料形成的白色区域,如CIE图所示。理想因子(n)和势垒高度(Φb)等二极管参数是在I-V特性的帮助下计算的。这仅报道了丝网印刷TiO_2-CuO厚?lm的新工作可能有助于制造用于光电应用的可能LED。

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