A near spurious-free 6 GHz LLSAW resonator with large electromechanical coupling on X-cut LiNbO3/SiC bilayer substrate

摘要

The fast development of the fifth-generation (5G) wireless systems and substantial growth of data usage have imposed stringent requirements for high-frequency and wideband radio frequency devices. Here, it is reported on a longitudinal leaky surface acoustic wave (LLSAW) mode acoustic resonator with a large electromechanical coupling factor (k(t)(2)), high operating frequency, and efficient spurious suppression. Through systematical finite element method simulations, available design spaces such as supporting substrate, propagation angle, and lithium niobate (LN) thickness have been fully investigated with the aim of stimulating the intended LLSAW and suppressing spurious modes concurrently. Optimization results reveal that the LLSAW mode wave propagating in X-35 degrees Y LN/SiC piezoelectric-on-insulator (POI) bilayer structure possesses a large k(t)(2) without significant interference from other spurious modes. To verify the theoretical analyses, LLSAW resonators were fabricated and exhibited a near spurious-free response with the operating frequency over 6 GHz, and k(t)(2) as large as 22.7. This work demonstrates a high-performance LLSAW resonator on the POI platform with a simple prototype as well as potentially providing a high-frequency filtering solution for 5G applications in the 6-GHz spectrum.