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机译:Selective Area Heteroepitaxy of p-i-n Junction GaP Nanopillar Arrays on Si (111) by MOCVD
Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, USA;
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA;
Gallium phosphide; selective area epitaxy; nanopillar; nanowire; MOCVD;