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Microwave surface resistance in nanostructured high-T-c superconductor films

机译:纳米结构高T-c超导体薄膜中的微波表面电阻

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摘要

The impact of artificially created defects nanostructure, formed by implanted dielectric nanoparticles or irradiation defects, on microwave properties of high-T-c superconductor films is analyzed in the framework of phenomenological theory for microwave response of type-II superconductors. We have calculated the surface resistance for such a kind of nanostructured type-II superconductor film and investigated conditions for the emergence of nonlinear response caused by the entrance of microwave-induced vortices in the film's interior through its edges. The obtained results indicate that artificial defect nanostructure in the film's interior formed by point-like or columnar structural defects can significantly improve its microwave characteristics in both the Meissner and mixed states and also increase the threshold for the onset of nonlinear response.
机译:在II型超导体微波响应的唯象学理论框架下,分析了由注入介电纳米粒子或辐照缺陷形成的人工缺陷纳米结构对高T-c超导体薄膜微波性能的影响。我们计算了这种纳米结构II型超导体薄膜的表面电阻,并研究了微波引起的涡旋通过其边缘进入薄膜内部引起的非线性响应的出现条件。结果表明,点状或柱状结构缺陷在薄膜内部形成的人工缺陷纳米结构可以显著改善其在迈斯纳态和混合态下的微波特性,并提高非线性响应的开始阈值。

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