Analytical modeling and simulation of lattice-matched Ferro PZT AIGaN/GaN MOSHEMTfor high-power and RF/Microwave applications

摘要

We present an analytical model for Ferro PZT Al_2O_3/AlGaN/AlN/GaN MOSHEMT involving the solution of Poisson and Schroedinger equations. This analytical model covers most of the operating regimes of the Ferro PZT MOSHEMT. The two-dimensional electron gas (2-DEG) sheet charge density (n_s), threshold voltage (V_(th)), drain current (I_(ds)), gate capacitance (C_(gs) and C_(gd)), and unit gain cutoff frequency(f_T) model equations are presented and simulated with MATLAB tool. It is observed that the insertion of the Ferro Pb(Zr, Ti)O_3 PZT (lead zirconium titanate) material can improve the device's performance. The proposed Ferro PZT MOSHEMT model accurately predicts a higher drain current of 1.14 A/mm, a high transconductance of 362 S/mm, a gate-to-source capacitance of 50.99 pF, a gate-to-drain capacitance of 38.25 pF, and high cutoff frequency of 0.033 THz for 20 nm AlGaN barrier layer. The results show good agreement with the TCAD-Atlas simulation and are satisfactory for the different AlGaN barrier layer thicknesses. The generated model and simulation results show the potential of using the Ferro PZT MOSHEMT for high-power and RF/Microwave applications.