Designing bismuth selenide/metal/bismuth selenide thin films to realize the integration of mid- to far-infrared transparency and conductivity

摘要

Designing semiconductor/metal/semiconductor (SMS) sandwich structure film is an effective way to combine transparency and conductivity. However, traditional SMS mainly uses metal oxides such as ITO as the semi-conductor material, which can only achieve transparency and conductivity in the visible to near-infrared band, but not in the mid-to far-infrared (MFIR) band. Here, we use bismuth selenide as semiconductor material and Ti as metal to construct SMS and achieve excellent MFIR transparent conductive properties. The results show that the conductivity of the SMS is increased by 3.8 times compared with the bismuth selenide, with only 3 decrease in the transmittance in 8-12 mu;m. Therefore, this study proposes a new material design strategy to solve the bottleneck problem of integrating MFIR transparency and conductivity.