Abstract The optoelectronic performance of ultraviolet-C laser diodes is improved by using AlN layer instead of AlGaN electron blocking layer in our proposed laser heterostructure. The large bandgap of AlN minimizes electron leakage on the p-side while increasing hole injection in the active zone. As a result, our numerical analysis shows that the lasing thresholds have been reduced from 16 to 5 kA/cm2, and the mode field intensity has improved by 11 resulting in a significant optical gain. From 0.5 to 1.88 W/A, the slope efficiency has substantially improved in our proposed device design.
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