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Growth behavior and insulation property of the oxide layer during micro-arc oxidation of aluminium in “soft” regime condition

机译:铝在“软”状态条件下微弧氧化过程中氧化层的生长行为和绝缘性能

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摘要

Abstract In this work, micro-arc oxidation was applied to fabricate a high voltage resistance Al2O3-based ceramic coating on the surface of aluminum alloy. The microstructure and insulating properties of the coatings were characterized by XRD, SEM and breakdown voltage testers. The growth behavior and insulation property of the oxide layer in “soft” regime conditions of micro-arc oxidation were determined. The relative contents of α-Al2O3 increased with “soft” plasma discharge time. The soft plasma discharge brought about a tendency of the micro-arc oxide coating to grow outward, further repairing the coating defects and yielding a denser coating layer with improved corrosion protection. Due to the presence of negative currents, the thickness of the whole layer increased, while the inner layer became denser and thicker as a consequence of soft sparks, favoring an increase in the density of the bulk coating layer. The breakdown voltage reached values above 1000 V after 20 min of soft plasma discharge, improving the of micro-arc oxidation coating insulation properties. The oxide layer is thus proposed as a potential candidate for insulation shielding of etching equipment.
机译:摘要 采用微弧氧化法在铝合金表面制备了一种耐高压Al2O3基陶瓷涂层。通过XRD、SEM和击穿电压测试仪对涂层的微观结构和绝缘性能进行了表征。测定了氧化层在微弧氧化的“软”状态条件下的生长行为和绝缘性能。α-Al2O3的相对含量随着等离子体放电时间的延长而增加。软等离子体放电使微弧氧化物涂层有向外生长的趋势,进一步修复了涂层缺陷,并产生了更致密的涂层,并改善了防腐性能。由于负电流的存在,整个层的厚度增加,而内层由于软火花而变得更致密和更厚,有利于本体涂层密度的增加。软等离子体放电20 min后击穿电压达到1000 V以上,提高了微弧氧化涂层的绝缘性能。因此,氧化层被提议作为蚀刻设备绝缘屏蔽的潜在候选者。

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