In this paper we have proposed a Heterojunction free Ga2O3 FinFET, and the different electrical characteristics have been analysed. Fin width is one of the most important parameters for the device performance, hence all the electrical charaterstics have been analysed for different fin widths. Temperature is one of the most important considerations for high power applications and hence electrical characteristics have been analysed by varying temperature also. Here, in the work done an exhaustive study on the RF and Linearity analysis on Heterojunction-free Ga2O3 layer FINFET using TCAD device simulator is demonstrated. The impact when varying the widths of fin along with the temperature variation for the device on various RF parameters like Drain current, g(m) (Transconductance), g(d) (output Conductance), C-gs and C-gd (gate capacitances), f(T) (cut-off frequency) are studied. The same has been performed even to calculate different linearity parameters such as g(m2), g(m3), VIP3, IIP3, IMD3, 1db compression point. It's observed that to have high value for fin width and to have lower temperature value is much worthier for RFIC applications. In order to exhibit the superiority of the Ga2O3 FINFET it has been compared with the SOI FINFET.
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