Two-inch diameter alpha-Ga2O3 films with thickness similar to 4 mu m were grown on basal plane sapphire by Halide Vapor Phase Epitaxy (HVPE) and doped with Sn in the top similar to 1 mu m from the surface. These films were characterized with High-Resolution X-ray Diffraction (HRXRD), Scanning Electron Microscope (SEM) imaging in the Secondary Electron (SE) and Micro-cathodoluminescence (MCL) modes, contactless sheet resistivity mapping, capacitance-voltage, current-voltage, admittance spectra, and Deep Level Transient Spectroscopy (DLTS) measurements. The edge and screw dislocations densities estimated from HRXRD data were respectively 7.4 x 10(9 )cm(-2) and 1.5 x 10(7) cm(-2), while the films had a smooth surface with a low density (similar to 10(3 )cm(-2)) of circular openings with diameters between 10 and 100 mu m. The sheet resistivity of the films varied over the entire 2-inch diameter from 200 to 500 omega square(-1). The net donor concentration was similar to 10(18 )cm(-3) near the surface and increased to similar to 4 x 10(18) cm(-3) deeper inside the sample. The deep traps observed in admittance and DLTS spectra had levels at E-c-0.25 eV and E-c-0.35 eV, with concentration similar to 10(15 )cm(-3) and E-c-1 eV with concentration similar to 10(16 )cm(-3).
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机译：采用卤化物气相外延法（HVPE）在基平面蓝宝石上生长了直径为4 μ m的直径为2英寸的α-Ga2O3薄膜，并在距表面1 μ m的顶部掺杂了Sn。采用高分辨率X射线衍射（HRXRD）、二次电子（SE）和微阴极发光（MCL）模式下的扫描电子显微镜（SEM）成像、非接触式电阻率映射、电容-电压、电流-电压、导纳光谱和深能级瞬态光谱（DLTS）测量等手段对薄膜进行了表征。HRXRD数据估计的边缘和螺杆位错密度分别为7.4 x 10（9 ）cm（-2）和1.5 x 10（7） cm（-2），而薄膜表面光滑，直径在10-100 μm之间的圆形开口密度低（类似于10（3）cm（-2））。薄膜的薄层电阻率在整个 2 英寸直径范围内从 200 到 500 欧米茄平方 （-1） 不等。净供体浓度在表面附近接近10（18）cm（-3），并在样品内部增加到4 x 10（18） cm（-3）深。在导纳和DLTS光谱中观察到的深陷阱水平为E-c-0.25 eV和E-c-0.35 eV，浓度与10（15）cm（-3）相似，E-c-1 eV浓度与10（16）cm（-3）相似。
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