Piezoelectric thin films are particularly difficult to model at the grain scale. Moreover, this problem is sparsely experimentally documented due to the lack of adequate methods. Here, an original methodology is proposed to study the behavior of single grains during in situ biasing. Pb(Zr,Ti)O3 films have been evaluated thanks to an in situ biasing x-ray diffraction technique performed on a synchrotron source with a sub-micronic x-ray beam. Small capacitors have been biased with DC voltage between 0 and +/- 20 V and at each step of bias a set of spotty Debye rings have been recorded. By selecting an appropriate region of interest, the evolution of a single grain peak has been followed. The fine analysis of these peaks allows to calculate the effective piezoelectric coefficient d(33,eff), the proportion of each domain variants, the tetragonality inside each grain, as well as their evolution during the electrical biasing. A higher heterogeneity in samples with morphotropic phase boundary composition is observed. This study contributes to a better understanding of the local behaviors in piezo/ferroelectric polycrystalline films and in the improvement of their performance for different applications.
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