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Effect of electrically induced cracks on the properties of PZT thin film capacitors

机译:Effect of electrically induced cracks on the properties of PZT thin film capacitors

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摘要

We present a study of the effect of electrically induced cracks on both the ferroelectric and piezoelectric properties of Pt/PbZr0.52Ti0.48O3 (PZT)/Pt capacitors and correlations with domain structures of PZT films. Above a threshold bipolar electric field, cracks appear inside the PZT layer thickness leading to an increase in the ferroelectric polarization (+50 for the remnant polarization, from 16 to 25 mu C/cm(2)) and the longitudinal piezoelectric coefficient d(33,f) (from SIM;150 to SIM;220 pm/V). The use of x-ray diffraction during in situ biasing provides direct evidence for a modification of the PZT crystalline structure as well as the a/c domain configuration. After cracking, the fraction of c-domains is strongly increased, thus contributing to higher polarization and larger strain in the out-of-plane direction.

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