A coarse‐grained electrothermal model for organic semiconductor devices

摘要

We derive a coarse‐grained model for the electrothermal interaction of organic semiconductors. The model combines stationary drift‐diffusion‐ based electrothermal models with thermistor‐type models on subregions of the device and suitable transmission conditions. Moreover, we prove existence of a solution using a regularization argument and Schauder's fixed point theorem. In doing so, we extend recent work by taking into account the statistical relation given by the Gauss–Fermi integral and mobility functions depending on the temperature, charge‐carrier density, and field strength, which is required for a proper description of organic devices.