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Tunable intrinsic spin Hall conductivity in BiTeI by applying hydrostatic pressure

机译:通过施加静水压力可调 BiTeI 中的本征自旋霍尔电导率

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摘要

This systematic study on the intrinsic spin Hall conductivity (SHC) of BiTeI aims to explore the role of hydrostatic pressure in controlling the topological properties and SHC. It was found that the sign of transverse spin Hall conductivity tensors sigma(z)(xy), sigma(y)(xz), and sigma(y)(zx) in BiTeI is reversed due to the topological transition under hydrostatic pressure. The change in sign originates from the variation in spin Berry curvature near A in the Brillouin zone, which is caused by Te-p and I-p orbital hybridization induced by the interplay coupling under hydrostatic pressure in BiTeI. Thus, SHC could be effectively tuned by changing the hydrostatic pressure. These results not only allow us to establish a fundamental understanding of SHC in BiTeI depending on the pressure but also provide guidelines for applying BiTeI in next-generation spintronic devices. Published under an exclusive license by AIP Publishing.
机译:本研究旨在探讨静水压力在控制拓扑性质和SHC中的作用。研究发现,由于静水压力下的拓扑跃迁,BiTeI中横向自旋霍尔电导率张量sigma(z)(xy)、sigma(y)(xz)和sigma(y)(zx)的符号被颠倒了。符号的变化源于布里渊区A附近自旋贝里曲率的变化,这是由BiTeI在静水压力下相互作用耦合诱导的Te-p和I-p轨道杂化引起的。因此,通过改变静水压力可以有效地调节SHC。这些结果不仅使我们能够根据压力对BiTeI中的SHC建立基本的了解,而且还为在下一代自旋电子器件中应用BiTeI提供了指导。在 AIP Publishing 的独家许可下发布。

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