Numerical optimization of (FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au) perovskite solar cell using solar capacitance simulator with efficiency above 23 predicted

摘要

Abstract The presented study deals with the investigations of the methyl ammonium tin halide (CH3NH3SnI3) based perovskite solar cells for optimized device performance using solar capacitance simulations software. Several necessary parameters such as metal work functions, thickness of structural layers, charge carrier’s mobility and defect density have been explored to evaluate the device performance. Calculations reveal that for the best efficiency of device the maximum thickness of the perovskite (CH3NH3SnI3) absorber layer must be 4.2 μm. The thickness values of 0.01 μm for ZnO electron transport layer (ETL), 0.871 μm for GaAs hole transport layer and 0.001 μm for CdS buffer layer have been found which proved to be optimum for maximum power conversion efficiency (PCE) of 23.80 for the device. The variation of open circuit voltage (Voc), Short circuit current (Jsc), Fill Factor (FF ), quantum efficiency (QE) against thickness of all layers and interface defect densities in FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au composition have been critically explored and their crucial role for the device performance has been reported. Heterojunctions between ZnO-ETL and CdS buffer layers have shown improved device performance and PCE. Current investigations may prove to be useful for designing and fabrication of climate friendly, non-toxic and highly efficient solar cells.