...
首页> 外文期刊>Journal of Applied Physics >Fano resonance with high Q and figure of merit in terahertz band based on structural perturbation
【24h】

Fano resonance with high Q and figure of merit in terahertz band based on structural perturbation

机译:Fano resonance with high Q and figure of merit in terahertz band based on structural perturbation

获取原文
获取原文并翻译 | 示例

摘要

Fano resonance with high quality (Q) factor and figure of merit (FoM) has significant application prospects in biosensors and lasers. However, most of the previous studies achieve Fano resonance with high Q and FoM by directly regulating the structural asymmetry, which needs high processing precision. To maximize the Q factor of a given resonator, the best constituent material could be a hypothetical perfect electrical conductor (PEC) without ohmic losses. Here, we can indirectly regulate the asymmetry of the structure by perturbation between structures. At low asymmetry, PEC double split rings can obtain high Q factor of 374 and FoM of 257 by adjusting structural asymmetry based on structural perturbation. These are significant for Fano resonances of extremely low-loss and low ohmic losses practical application in the THz band. Published under an exclusive license by AIP Publishing.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号