We have fabricated two-tiered heterostructures consisting ofphosphorus d-doped Si quantum dots (Si-QDs) and undoped Si-QDs andstudied their electron field emission properties. Electron emission wasobserved from the P-doped Si-QDs stack formed on the undoped Si-QDsstack by applying a forward bias of ~6 V, which was lower than that forpure Si-QDs stack. This result is attributed to electric field concentration onthe upper P-doped Si-QD layers beneath the layers of the undoped Si-QDsstack due to the introduction of phosphorus atom into the Si-QDs, whichwas positively charged due to the ionized P donor. The results lead to thedevelopment of planar-type electron emission devices with a low-voltageoperation.
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