Effect of incorporating two-dimensional transition metal Mo and photoelectric element Ga on micro-characteristic of chalcogenide-based ZnS/Se

摘要

There is a challenge to increase the application range of chalcogenide materials due to the fixed photoelectric properties and complex preparation process. To solves the problem, bulk ceramics with different doping ratios should be investigated. Here, the influence of the doping ratio of molybdenum MO and Ga oxide on the composition, structure, morphology and luminescence properties of bulk ceramics is studied, the optimal doping ratio in this range is determined by analysis of mass loss and volume shrinkage. The cubic crystal structure is confirmed by X-ray diffraction results. The results showed that molybdenum was successfully doped Mo into the matrix material is revealed by Raman spectroscopy. The X-ray fluorescence is used to study the composition ratio changes of bulk ceramics before and after sintering. The molecular structure model of Mo-ZnSe/ZnS with different concentration is constructed. The X-ray photoelectron spectroscopy shows the spin orbits of Zn 2p and S 2p, as well as the +3 valences in terms of Mo and Ga. The optical performance is enhanced the light-emitting band is enlarged to the near infrared region. All the work suggest that this new compound has an improved micro-structural, optical and electrical properties. This research can provide theoretical and experimental reference for the doping research of chalcogenide materials and new optoelectronic devices.