首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Quasi-Two-Dimensional Heterostructures (KM1 – xTe)(LaTe3) (M = Mn and Zn) with Charge Density Waves
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Quasi-Two-Dimensional Heterostructures (KM1 – xTe)(LaTe3) (M = Mn and Zn) with Charge Density Waves

机译:具有电荷密度波的准二维异质结构 (KM1 – xTe)(LaTe3) (M = Mn 和 Zn)

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摘要

M _(1 – x )Te_(4) (M = Mn and Zn; x ≈ 0.35) featuring two chemically distinct alternating layers LaTe_(3) and KM _(1 – x )Te. Their crystal structures are incommensurate, determined by single X-ray diffraction for the Mn compound and a transmission electron microscope study for the Zn compound. KLaMn_(1 – x )Te_(4) crystallizes in the orthorhombic superspace group Pmnm (01/2γ)s 00 with lattice parameters a = 4.4815(3) Å, b = 21.6649(16) Å, and c = 4.5220(3) Å. It exhibits charge density wave order at room temperature with a modulation wave vector q = 1/2b * + 0.3478c * originating from electronic instability of Te-square nets in LaTe_(3) layers. The Mn analog exhibits a cluster spin glass behavior with spin freezing temperature T _(f) ≈ 5 K attributed to disordered Mn vacancies and competing magnetic interactions in the Mn_(1 – x )Te layers. The Zn analog also has charge density wave order at room temperature with a similar q -vector having the c * component ∼0.346 confirmed by selected-area electron diffraction. Electron transfer from KM _(1 – x )Te to LaTe_(3) layers exists in KLaM _(1 – x )Te_(4), leading to an enhanced electronic specific heat coefficient. The resistivities of KLaM _(1 – x )Te_(4) (M = Mn and Zn) exhibit metallic behavior at high temperatures and an upturn at low temperatures, suggesting partial localization of carriers in the LaTe_(3) layers with some degree of disorder associated with the M atom vacancies in the M _(1 – x )Te layers.>
机译:M _(1 – x )Te_(4) (M = Mn 和 Zn; x ≈ 0.35) 具有两个化学上不同的交替层 [LaTe_(3)] 和 [KM _(1 – x )Te]。它们的晶体结构是不相称的,通过对Mn化合物的单次X射线衍射和Zn化合物的透射电子显微镜研究来确定。KLaMn_(1 – x )Te_(4) 在晶格参数 a = 4.4815(3) Å、b = 21.6649(16) Å 和 c = 4.5220(3) Å 的斜交超空间群 Pmnm (01/2γ)s 00 中结晶。它在室温下表现出电荷密度波序,调制波矢量q = 1/2b * + 0.3478c *源于[LaTe_(3)]层中Te-square网的电子不稳定性。Mn类似物表现出自旋玻璃行为,自旋冻结温度T _(f)≈5 K,这归因于[Mn_(1 – x )Te]层中的无序Mn空位和竞争性磁相互作用。Zn类似物在室温下也具有电荷密度波序,具有类似的q矢量,其c*分量∼0.346由选定区域电子衍射确认。KLaM _(1 – x )Te_(4)中存在从 [KM _(1 – x )Te] 到 [LaTe_(3)] 层的电子转移,导致电子比热系数增强。KLaM _(1 – x )Te_(4) (M = Mn 和 Zn) 的电阻率在高温下表现出金属行为,在低温下表现出上升,表明 [LaTe_(3)] 层中的载流子部分定位,与 [M _(1 – x )Te] 层中的 M 原子空位有关。>

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