机译:Design of an RF output Class JJ?1 Doherty power amplifier using post‐matching varactor diodes for configurable IoT transmitters
Galgotias College of Engineering and Technology;
SRM Institute of Science and Technology;
Jawaharlal Nehru University||Dr. B. R. Ambedkar National Institute of Technology;
Doherty power amplifier (DPA); gallium arsenide (GaAs); post‐matching network; power‐added efficiency (PAE); stacked FET;