Toward the ferroelectric field-effect transistor on BaTiO3/LaMnO3 heterostructure: DFT investigation

摘要

We investigated the possibilities of switchable two-dimensional electron gas (2DEG) at the interface of antiferromagnetic and ferroelectric perovskites, LaMnO3/BaTiO3 (LMO/BTO) superlattice, by means of ab initio calculations. We show that in the LMO/BTO heterostructure the two-dimensional conducting state may be induced by applying external electrical field. Defects in the form of oxygen vacancies on the surface stimulate that phenomenon. The density of states at the Fermi-level can be tuned by ferroelectric polarization reversal. The conducting state is mainly localized within the interfacial MnO layer and it coexists with magnetic state, which arises mainly from Mn atoms.