Design and optimize giant spin-Hall effect spin transfer torque random access memory using optical switching connections

摘要

All-optical switching connectors (AOSC) are made of topological insulators (three-dimensional magnetic materials) which reverse the magnetization field using short laser pulses. They gained extensive attention in the past decade due to its high potential for fast and energy-efficient data writing in the spintronic memory applications. Regrettably, using of AOSC in the ferromagnetic multilayers needs multiple pulses for the magnetization reversal that losing its speed and energy efficiency. Here we use the single-pulse mid-infrared and microwave photoexcitation to enable ultrafast manipulation of surface private intraband terahertz and gigahertz transitions in result of spin Hall effect driven motion of magnetic domains in Bi2Se3 synthetic ferromagnetic material of AOSC. This optical excitation is achieved in the magnetic tunnel cell by the optical Hall effect (OHE) of magnetic tunnel junction cells. Therefore, by measuring the (z) axis of optical field of spin Hall effect on the ferromagnetic topological material, the data stored by the optical excitation can be calculated and the write efficiency on the ferromagnetic material is verified. Our experiments show that the use of Bi2Se3 type topological material in both single-pulse AOSC optical excitations is powerful to amplify the OHE field amplitude, which may eventually pave the way for integrated photonic current based memory circuits.