Advanced Universal Hydrostatic Pressure Device with Pneumatic Amplifier for the Investigation of the Electrical and Thermal Properties of Semiconductors under Hydrostatic Pressure

摘要

A new design of a universal hydrostatic pressure device with a pneumatic amplifier for studying the electrophysical properties of semiconductors with deep impurity centers under hydrostatic pressure has been developed. The device makes it possible to perform a pulsed action of hydrostatic pressure on the test sample in two modes. This is a thermo mode in which the action of a pulsed pressure leads to an increase in the temperature of the sample and an isothermal mode in which the action of pressure is carried out without changing the temperature. It is shown, that the second mode provides the possibility to observe relaxation effects in semiconductors with deep levels at pulse pressure. The technical possibilities of the proposed device make it possible to carry out a study in both hydro-chamber modes in a range of pressures of 0-2 GPa and a temperature of 273-500 K. The maximum rate of pressure build-up in the thermal mode of the dP/dt = 2 x 10(8) Pa/s. In addition, in the isothermal mode of the hydrochamber, the pressure spreads almost instantaneously.