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Effects of vacancies on Mg2NiH4 hydrogen desorption and capture: A first-principles study

机译:空位对Mg2NiH4氢气脱附捕获的影响:第一性原理研究

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摘要

The effects of vacancies on Mg2NiH4 hydrogen desorption and capture are investigated by first principles calculations and the crystal structure, enthalpy and electronic structure are discussed in this work. The introduction of vacancies reduces the thermodynamic stability, and the dehydrogenation enthalpies of Mg2NiH4-Vm (m = Mg1, Mg2, Mg3 and Ni) are lower than that of Mg2NiH4. The dangling bonds are generated in Mg2NiH4-VMg2 and Mg2NiH4 -VMg3, corresponding to smaller changes of crystal structures and lower stabilities. The trapping of H atoms in Mg2NiH4-Vm (m = Mg1, Mg2 and Mg3) can proceed spontaneously. The captured hydrogen atom H33 and the nearby NiH44-group forms a Ni-5H group in Mg2NiH4-Vm (m = Mg1, Mg2 and Mg3). The weak hybridization of H33 with Ni d orbital and the generation of free electrons are responsible for the much higher formation enthalpy of Mg16Ni8H33-VMg1 than Mg16Ni8H33-VMg2 and Mg16Ni8H33-VMg3. The strong hybridization between the H33 atom and the free H3 atom in Mg16Ni8H33-VNi indicates that the addition of H33 leads to the transition of the electrons, and this process cannot take place spon-taneously. This work confirms the positive effects of vacancies on Mg2NiH4 and provides a new research perspective to control the hydrogen storage capacities of Mg-based alloys.(c) 2023 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
机译:采用第一性原理计算研究了空位对Mg2NiH4氢气脱附和捕集的影响,并讨论了其晶体结构、焓和电子结构。空位的引入降低了热力学稳定性,Mg2NiH4-Vm(m=Mg1、Mg2、Mg3和Ni)的脱氢焓低于Mg2NiH4。悬垂键在Mg2NiH4-VMg2和Mg2NiH4-VMg3中生成,对应于晶体结构的较小变化和较低的稳定性。H原子在Mg2NiH4-Vm(m = Mg1,Mg2和Mg3)中的捕获可以自发进行。捕获的氢原子H33和附近的NiH44基团在Mg2NiH4-Vm(m = Mg1,Mg2和Mg3)中形成Ni-5H基团。H33 与 Ni d 轨道的弱杂化和自由电子的产生是 Mg16Ni8H33-VMg1 的生成焓远高于 Mg16Ni8H33-VMg2 和 Mg16Ni8H33-VMg3 的原因。Mg16Ni8H33-VNi中H33原子与游离H3原子的强杂化表明,H33的加入导致了电子的跃迁,这一过程不能自然发生。本研究证实了空位对Mg2NiH4的积极影响,为控制Mg基合金的储氢能力提供了新的研究思路。(c) 2023 Hydrogen Energy Publications LLC.,由Elsevier Ltd.出版。保留所有权利。

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