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Doping-Induced Superconductivity in the Topological Semimetal Mo5Si3

机译:拓扑半金属Mo5Si3中掺杂诱导的超导性

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摘要

Chemical doping of topological materials may provide a possible route for realizing topological superconductivity. However, all such cases known so far are based on chalcogenides. Here we report the discovery of superconductivity induced by Re doping in the topological semimetal Mo5Si3 with a tetragonal structure. Partial substitution of Re for Mo in Mo5-xRexSi3 results in an anisotropic shrinkage of the unit cell up to the solubility limit of approximately x = 2. Over a wide doping range (0.5 <= x <= 2), these silicides are found to be weakly coupled superconductors with a fully isotropic gap. T-c increases monotonically with x from 1.67 to 5.78 K, the latter of which is the highest among superconductors of the same structural type. This trend in T-c correlates well with the variation of the number of valence electrons and is mainly ascribed to the enhancement of electron-phonon coupling. In addition, band structure calculations reveal that superconducting Mo5-xRexSi3 exhibits nontrivial band topology characterized by Z(2) invariants (1;000) or (1;111) depending on the Re doping level. Our results suggest that transition metal silicides are a fertile ground for the exploration of candidate topological superconductors.
机译:拓扑材料的化学掺杂可能为实现拓扑超导性提供一条可能的途径。然而,迄今为止已知的所有此类病例都是基于硫族化合物。在这里,我们报道了在具有四方结构的拓扑半金属Mo5Si3中Re掺杂诱导的超导性的发现.在Mo5-xRexSi3中,Re被Mo部分取代导致晶胞的各向异性收缩,直至溶解度极限约为x = 2。在很宽的掺杂范围(0.5 <= x <= 2)下,这些硅化物被发现是具有完全各向同性间隙的弱耦合超导体。T-c从1.67 K单调增加到5.78 K,后者是相同结构类型的超导体中最高的。T-c的这种趋势与价电子数的变化密切相关,主要归因于电子-声子耦合的增强。此外,能带结构计算表明,超导Mo5-xRexSi3表现出非平凡的能带拓扑结构,其特征是Z(2)不变量(1;000) 或 (1;111)取决于Re掺杂水平。我们的研究结果表明,过渡金属硅化物是探索候选拓扑超导体的沃土。

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