A new carbon nano-tube ?eld-effect transistors (CNTFETs) based Power Ef?cient and Robust 8T (PER-8T) SRAM cell isproposed to reduce sub-threshold leakage currents, data dependency by improving RBL swing due to which RSNM is improved.Leakage power is reduced by using only single pull-up transistor with High Vt in storage latch. Half-select issue is eliminated sinceproposed work uses de-coupled read port. This CNTFET based proposed PER-8T cell is analysed for performance parameters likepower, delay and stability and compared to 8T SRAM cells at 45 nm technology. All simulations are performed at supply voltageof 0.9 V considering Stanford Virtual Source CNTFET(VS-CNTFET) model. It shows that RSNM and WSNM are improved by12.07, 14.85, 56 and 46.46, 20.39, 66.05 compared to single ended 8T SRAM cells available in recent literature.Effects of VS-CNTFET parameters such as dielectric material, temperature, oxide thickness and carbon nano tube diameter valueson hold power is analysed and best values are considered. The cadence tool is used for measuring all design metrics at roomtemperature of 25 °C.
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