Based on the known information about the main bulk properties of the initial binary compounds (InP, CdS, CdTe) and capabilities of the method of isothermal diffusion, preparation procedures of solid solutions of InP-CdTe and CdS-CdTe systems (of hetero- and homosubstitution) are developed. Based on the results of X-ray diffraction, microscopic and electron microscopic, and optical studies, the obtained solid solutions are classified as substitutional solid solutions with the structures of sphalerite and wurtzite, respectively; average sizes d(av) and average numbers n(av) of the most represented particles in the components of the systems and values of band-gap energy increment E of the solid solutions are determined for the first time. The acid-base properties of the surfaces of the components of the systems are studied, and their weakly acidic character at a relatively increased acidity of the surfaces of the solid solutions of the InP-CdTe system is shown. Both smooth and extreme dependences of the bulk and surface properties on the composition are determined. The found similarity and difference in the behavior of the solid solutions of the systems are explained by the predominant effect of either the common binary component (CdTe) or the first binary components (InP, CdS), which differ by the values of the band gap energy, difference of electronegativities, and fraction of the ionic bond. Considerations are expressed about the possibilities of the use of a facilitated way of searching for new adsorbents-materials for semiconductor gas analysis.
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