A Fast Short-Circuit Protection Method for SiC MOSFET Based on Indirect Power Dissipation Level

摘要

This letter proposes an indirect power dissipation level short circuit protection (IPDL-SCP) method for silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (mosfets). Due to differences between normal conducting and short-circuit (SC) conditions, this method is triggered by the voltage oscillation vss at the parasitic inductance (Lss) of the source and directly monitoring vds of SiC mosfet. For verification, the short circuit protection circuit is tested and proved functional on the SC test bench. Experimental results show that the protection circuit can respond to both hard switching fault (HSF) and fault under load (FUL), while the fastest response delays are 75 ns for HSF and 170 ns for FUL. Comparisons with other commonly used SC protection methods have also been made, which show that the proposed IPDL-SCP method has better performance in shorter protection delays.