Anomalous Hall effect, an interesting transport behavior, is of importance topic for fundamental physics and device application. Recently, the sign change of anomalous Hall effect (AHE) in some materials has being concerned. Here, we study the electrical transport, magnetic properties, and AHE of Cr_(2.63)V_(0.25)Te_4 single crystals. Cr_(2.63)V_(0.25)Te_4 shows a bad metal behavior with a resistivity kink at 178 K, corresponding to a peak on a heat capacity-temperature curve, and the strong electron correlation should be a dominant transport mechanism below 178 K. At this temperature, the magnetization shows a sharp magnetic transition. The linear Hall resistivity at a high field with a positive slope suggests a p-type conductivity for bulk Cr_(2.63)V_(0.25)Te_4. The clear AHE is observed below 180 K with a larger anomalous Hall conductivity σ_(xy) ～ 2000Ω~(-1) cm~(-1) at 3 K. For 3-60 K, an AHE coefficient R_s is negative, and R_s is positive between 100 and 180 K. The sign change of AHE may be due to Fermi level crossing the overlap of 3d band in ferromagnetic transition-metal materials. Based on our analysis, the AHE mechanism should be the skew scattering. Our results reveal the interesting physical properties in Cr_(2.63)V_(0.25)Te_4 single crystals and give another system to study AHE for future Hall device design.
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