Tailoring the Dirac point voltage of graphene is crucial for achieving various practical applications. Here, we demonstrate a strategy to adjust the doping state of graphene by in situ N-doping in an NH4Cl solution assisted by a femtosecond laser. In the IDS-VGS curve, the Dirac voltage of graphene moves towards the negative VGS after the N-doping process. The formation of C-NH2 bonds during the N-doping process is confirmed by XPS spectra. This method can rapidly and efficiently perform large-area in situ graphene doping, which may have potential ap-plications in tailoring the energy band, conductivity type, and catalytic activity of oxygen reduction.
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