Charge Carrier Statistics-Based Analytical Model and Simulation of Optical Mechanisms in White Graphene for High-Quality FETs and Optoelectronic Applications

摘要

The aim of the present paper is to investigate the scaling behaviors of charge carriers and optical mechanisms in white graphene. The approach in this work is to provide analytical models for carrier velocity, carrier mobility, relaxation time and optical mechanisms of white graphene such as optical conductivity, absorption, transmittance, reflectivity, extinction coefficients and electron energy loss function. For doing so, one starts with identifying the analytical modeling of carrier concentration in the degenerate and nondegenerate regions. The computational models of carrier velocity, mobility and relaxation time with numerical solutions are analytically derived, in which the normalized Fermi energy, carrier concentration and temperature characteristics dependence are highlighted. Moreover, the optical mechanisms of white graphene are analytically modeled based on degenerate conductance. The proposed analytical models demonstrate a rational agreement with our simulation results and previous experiments in terms of trend and value. The remarkable properties of white graphene mentioned in this paper and obtained results bring new hopes for using of white graphene as a good substrate for nanomaterials such as graphene, germanene, stanene and silicene in electronics and optoelectronic applications.