Abstract The use of γ-graphyne-1 nanotubes (GyNTs) in tunneling field effect transistors (TFETs) suppresses ambipolarity and enhances the?subthreshold swing (SSdocumentclass12pt{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}$$mathrm{SS}$$end{document}) of TFETs, due to the large energy band gap and high electron effective mass of GyNTs. In this research, the analysis of the structural, electronic and thermoelectric properties of the γ-graphyne-1 family under the deformation potential (DP) approach reveals that the electron–phonon mean free path (MFP) of an armchair GyNT (3AGyNT) and zigzag GyNT (2ZGyNT) are 24documentclass12pt{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}$$24$$end{document} and 279documentclass12pt{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}$$279$$end{document}?nm, respectively. Therefore, ballistic transport of sub-10-nm 3AGyNT-TFETs and 2ZGyNT-TFETs in different channel lengths is investigated utilizing the?non-equilibrium Green’s function (NEGF) formalism in the DFTB platform. An ultrahigh on/offdocumentclass12pt{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}$$mathrm{on}/mathrm{off}$$end{document}-current ratio (OOCRdocumentclass12pt{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}$$mathrm{OOCR}$$end{document}) value of 1.6?×?1010 at VDD=0documentclass12pt{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}$$V_{DD} = 0$$end{document}. 2Vdocumentclass12pt{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}$$2 ;{text{V}}$$end{document} and very low point SSdocumentclass12pt{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}$${text{SS}}$$end{document} of 5mV/decdocumentclass12pt{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}$$5 ;{text{mV}}/{text{dec}}$$end{document} were demonstrated by the 3AGyNT-TFET with a?channel length of 9.6 ?nm. 2ZGyNT-TFETs show higher on-state current and SSdocumentclass12pt{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}$${text{SS}}$$end{document} and lower OOCRdocumentclass12pt{minimal} usepackage{amsmath} usepackage{wasysym} usepackage{amsfonts} usepackage{amssymb} usepackage{amsbsy} usepackage{mathrsfs} usepackage{upgreek} setlength{oddsidemargin}{-69pt} begin{document}$${text{OOCR}}$$end{document} than those of 3AGyNT-TFETs. A linear relationship was found between channel length and logarithmic off-state current that is consistent with the WKB appro
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