Impact of nanoscale fluctuations and cap-layer thickness in buried InGaN single quantum wells probed by tip-enhanced Raman scattering

摘要

Ternary semiconductors such as InGaN thin films, quantum wells, and superlattices commonly exhibit alloy fluctuations that become increasingly pronounced with higher In-content. The thickness fluctuations of quantum wells and their thin cap-layers further introduce nanoscale inhomogeneities that alter the potential landscape. In this work, we present a combined theoretical and experimental study of InGaN single quantum wells with thin GaN cap-layers to unravel the influence of cap-layer thickness, compositional inhomogeneity, and thickness fluctuations on their electronic and optical properties. A pronounced spectral shift of quantum well emission for thin cap-layers between 1 and 10 nm is observed by micro-photoluminescence spectroscopy. The origin of this shift is explained by calculations of electronic band profiles and probability density overlap of carriers in the quantum well. The impact of alloy fluctuations and homogeneity for different cap-layer thicknesses is studied on both the microscale and nanoscale using UV micro-Raman scattering and tip-enhanced Raman spectroscopy (TERS). On the microscale, the alloy composition as determined by micro-Raman mapping appears very homogeneous except for the thinnest 1 nm cap-layer where small fluctuations are visible. On the nanoscale, TERS reveals local fluctuations on a 20-30 nm length scale. The influence of the cap-layer thickness on the TERS spectra is discussed regarding both the nanoscale homogeneity and the depth resolution of the near-field Raman scattering technique. Our results demonstrate the capabilities of TERS to resolve nanoscale thickness fluctuations and compositional inhomogeneities in ultra-thin semiconductor layers, even when they are buried by thin cap-layers with thick-nesses below 10 nm.