Optimization of the heat conduction process in a double-gate MOSFET using an enhanced electrothermal model

摘要

Abstract In this work, a highly nonlinear electrical model based on drift–diffusion (D-D) formulation is derived and consequently used to investigate the electrical performance of a 22-nm double-gate (DG) metal–oxide–semiconductor field-effect transistor (MOSFET). To better predict the phonon transport in the nanoscale regime, we have coupled the proposed electrical model with an enhanced ballistic–diffusive equation (BDE). The improvement of the BDE model is given essentially by coupling a ballistic heat flux gradient expression to the classical BDE model. The electrothermal performance of the DG MOSFET is investigated in this work with the variation of drain and gate biases and with the addition of HfO2 as gate dielectric oxide. To validate the proposed electrical formulation, a comparison of the electrical results is done with numerical data from TCAD simulation. As a result, we have shown a good agreement between our electrical results and results from the TCAD simulator. Moreover, we have shown that the addition of HfO2 gate oxide can reduce the thermal conduction in the proposed structure.