GaN RF power devices have been and products, hastening their deployment for defense and commercial applications, in turn driving prices down and increasing accessibility. To fully realize GaN's impressive performance-reduced capacitance, higher electron mobility, low conduction losses, faster switching and higher frequency-temperature and frequency-voltage characteristics than silicon-engineers must pair GaN devices with high performance passive components. Passive components are important circuit elements for impedance matching, bias filtering, DC blocking and thermal management. Without paying attention to the effects of these passive components, designers risk limiting the technology from reaching the full capabilities of its performance.
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